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FQP6N60C_F080

MOSFET Trans MOS N-Ch 600V 5.5A 3-Pin 3+Tab

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SeekIC No. : 00162432 Detail

FQP6N60C_F080: MOSFET Trans MOS N-Ch 600V 5.5A 3-Pin 3+Tab

FQP6N60C_F080 Data Sheet

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Part Number:
FQP6N60C_F080
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 2 Ohms


Parameters:

Technical/Catalog InformationFQP6N60C_F080
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C5.5A
Rds On (Max) @ Id, Vgs2 Ohm @ 2.75A, 10V
Input Capacitance (Ciss) @ Vds 810pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP6N60C_F080
FQP6N60C_F080



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