FQP6N50C

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

` 5.5 A, 500 V, R<sub>DS(on)</sub> = 1.2 @ <sub>VG</sub>S = 10 V
` Low gate charge ( typical 19 nC )
` Low Crss ( typical 15 pF)
` Fast switching
` 100 % avalanche tested
` Improved dv/dt capability


Specifications

Symbol	Parameter	FQP6N50C	Units
VDSS	Drain-Source Voltage	500	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	5.5	A
		3.5	A
IDM	Drain Current - Pulsed (Note 1)	22	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	300	mJ
IAR	Avalanche Current (Note 1)	5.5	A
EAR	Repetitive Avalanche Energy (Note 1)	9.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	98	W
		0.78	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18mH, I_AS = 5.5A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 5.5A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These N-Channel enhancement mode power field effect transistors of FQP6N50C are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP6N50C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology

Parameters:

Technical/Catalog Information	FQP6N50C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	700pF @ 25V
Power - Max	98W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP6N50C FQP6N50C