FQP6N45

MOSFET

product image

FQP6N45 Picture
SeekIC No. : 00166863 Detail

FQP6N45: MOSFET

floor Price/Ceiling Price

Part Number:
FQP6N45
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/17

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 450 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.2 A
Resistance Drain-Source RDS (on) : 1.1 Ohms
Drain-Source Breakdown Voltage : 450 V


Features:

• 6.2A, 450V, RDS(on) = 1.1 @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter FQP6N45 Units
VDSS Drain-Source Voltage 450 V
ID Drain Current - Continuous (TC = 25)
                      - Continuous (TC = 100)
6.2 A
3.9 A
IDM Drain Current - Pulsed                                    (Note 1) 25 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy                    (Note 2) 350 mJ
IAR Avalanche Current                                         (Note 1) 6.2 A
EAR Repetitive Avalanche Energy                         (Note 1) 9.8 mJ
dv/dt Peak Diode Recovery dv/dt                           (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25)
         - Derate above 25
98 W
0.78 W/
TJ , TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300



Description

These N-Channel enhancement mode power field effect transistors of FQP6N45 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQP6N45 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP6N45 is well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Semiconductor Modules
Isolators
Crystals and Oscillators
Sensors, Transducers
Motors, Solenoids, Driver Boards/Modules
View more