FQP3N50C

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 2.5 Ohms


Features:

* 3 A, 500 V, R_DS(on)  = 2.5 @ V_GS = 10 V
* Low gate charge ( typical 10 nC )
* Low Crss ( typical 8.5 pF)
* Fast switching
* 100 % avalanche tested
* Improved dv/dt capability


Specifications

Symbol	Parameter		FQP3N50C	FQPF3N50C	Units
VDSS	Drain-Source Voltage		500		V
ID	Drain Current	- Continuous (TC = 25)	3	3 *	A
		- Continuous (TC = 100)	1.8	1.8 *	A
IDM	Drain Current - Pulsed        (Note 1)		12	12 *	A
VGSS	Gate-Source Voltage		±30		V
EAS	Single Pulsed Avalanche Energy         (Note 2)		200		mJ
IAR	Avalanche Current            (Note 1)		3		A
EAR	Repetitive Avalanche Energy   (Note 1)		6.2		mJ
dv/dt	Peak Diode Recovery dv/dt      (Note 3)		4.5		V/ns
PD	Power Dissipation (TC = 25)		62	25	W
	- Derate above 25		0.5	0.2	W/
TJ , TSTG	Operating and Storage Temperature Range		-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300

Description

  These N-Channel enhancement mode power field effect transistors of FQP3N50C are produced using Fairchild's proprietary, planar stripe,DMOS technology.

  This advanced technology FQP3N50C has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. FQP3N50C is well suited for high effi-ciency switched mode power supplies, active power factor cor-rection, electronic lamp ballasts based on half bridge topology.