FQP3N30

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3.2 A
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 2.2 Ohms


Features:

• -3.2A, 300V, R _DS(ON)= 2.2Ω @V_GS = 10 V
• Low gate charge ( typical 5.5 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested



Specifications

Symbol	Parameter	FQP3N30	Units
VDSS	Drain-Source Voltage	300	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	3.2	A
		2.02	A
IDM	Drain Current - Pulsed (Note 1)	12.8	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	140	mJ
IAR	Avalanche Current (Note 1)	3.2	A
EAR	Repetitive Avalanche Energy (Note 1)	5.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25°C)- Derate above 25°C	55	W
		0.44	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQP3N30 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology FQP3N30 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP3N30 is well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.

Parameters:

Technical/Catalog Information	FQP3N30
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	3.2A
Rds On (Max) @ Id, Vgs	2.2 Ohm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds	230pF @ 25V
Power - Max	55W
Packaging	Tube
Gate Charge (Qg) @ Vgs	7nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP3N30 FQP3N30