FQP34N20

MOSFET 200V N-Channel QFET

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SeekIC No. : 00156324 Detail

FQP34N20: MOSFET 200V N-Channel QFET

floor Price/Ceiling Price

US $ .52~.7 / Piece | Get Latest Price
Part Number:
FQP34N20
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.7
  • $.58
  • $.54
  • $.52
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 31 A
Resistance Drain-Source RDS (on) : 0.075 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 31 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.075 Ohms


Features:

• 31A, 200V, R DS(ON)= 0.075Ω @VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 55 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol
Parameter
FQP34N20
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
31
A
20
A
IDM
Drain Current - Pulsed (Note 1)
124
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2) 
640
mJ
IAR
Avalanche Current (Note 1)
31
A
EAR
Repetitive Avalanche Energy (Note 1)                                        
18
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)- Derate above 25°C
180
W
1.43
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQP34N20 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology FQP34N20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP34N20 is well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.

 


Parameters:

Technical/Catalog InformationFQP34N20
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C31A
Rds On (Max) @ Id, Vgs75 mOhm @ 15.5A, 10V
Input Capacitance (Ciss) @ Vds 3100pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs78nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP34N20
FQP34N20



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