FQP33N10L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.039 Ohms


Features:

• 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQP33N10L	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	33	A
		23	A
IDM	Drain Current - Pulsed (Note 1)	132	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	430	mJ
IAR	Avalanche Current (Note 1)	33	A
EAR	Repetitive Avalanche Energy (Note 1)	12.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	127	W
		0.85	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQP33N10L are produced using Fairchild's proprietary, planar stripe, DMOS technology.
 
This advanced technology FQP33N10L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP33N10L is well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Parameters:

Technical/Catalog Information	FQP33N10L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	33A
Rds On (Max) @ Id, Vgs	52 mOhm @ 16.5A, 10V
Input Capacitance (Ciss) @ Vds	1630pF @ 25V
Power - Max	127W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP33N10L FQP33N10L