FQP32N12V2

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 120 V
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

• 32 A, 120V, R_DS(on) = 0.05 @V_GS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQP32N12V2	FQPF32N12V2	Units
VDSS	Drain-Source Voltage	120		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	32	32*	A
		23	23*	A
IDM	Drain Current - Pulsed (Note 1)	128	128*	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	439		mJ
IAR	Avalanche Current (Note 1)	32		A
EAR	Repetitive Avalanche Energy (Note 1)	15		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	150	50	W
		1	0.3	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.5mH, I_AS = 32A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 32A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These N-Channel enhancement mode power field effect transistors of FQP32N12V2 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP32N12V2 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.

Parameters:

Technical/Catalog Information	FQP32N12V2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	50 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1860pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP32N12V2 FQP32N12V2