FQP2N90

MOSFET 900V N-Channel QFET

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SeekIC No. : 00148552 Detail

FQP2N90: MOSFET 900V N-Channel QFET

floor Price/Ceiling Price

US $ .42~.68 / Piece | Get Latest Price
Part Number:
FQP2N90
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.68
  • $.53
  • $.49
  • $.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 7.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 7.2 Ohms
Continuous Drain Current : 2.2 A


Parameters:

Technical/Catalog InformationFQP2N90
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C2.2A
Rds On (Max) @ Id, Vgs7.2 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds 500pF @ 25V
Power - Max85W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP2N90
FQP2N90



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