MOSFET 900V N-Channel QFET
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 2.2 A | ||
Resistance Drain-Source RDS (on) : | 7.2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | FQP2N90 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25° C | 2.2A |
Rds On (Max) @ Id, Vgs | 7.2 Ohm @ 1.1A, 10V |
Input Capacitance (Ciss) @ Vds | 500pF @ 25V |
Power - Max | 85W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 15nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQP2N90 FQP2N90 |