FQP24N08

MOSFET 80V N-Channel QFET

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SeekIC No. : 00146504 Detail

FQP24N08: MOSFET 80V N-Channel QFET

floor Price/Ceiling Price

US $ .45~.73 / Piece | Get Latest Price
Part Number:
FQP24N08
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.73
  • $.56
  • $.52
  • $.45
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.06 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 80 V
Continuous Drain Current : 24 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.06 Ohms


Features:

• 24A, 80V, RDS(on) = 0.06Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating



Specifications

Symbol Parameter
FQP24N08
Units
VDSS Drain-Source Voltage
80
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
24
A
17
A
IDM Drain Current - Pulsed (Note 1)
96
A
VGSS Gate-Source Voltage
± 25
V
EAS Single Pulsed Avalanche Energy (Note 2)
230
mJ
IAR Avalanche Current (Note 1)
24
A
EAR Repetitive Avalanche Energy (Note 1)
7.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
6.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
75
W
0.5
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQP24N08 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQP24N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP24N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.




Parameters:

Technical/Catalog InformationFQP24N08
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C24A
Rds On (Max) @ Id, Vgs60 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 750pF @ 25V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP24N08
FQP24N08



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