Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 21 A
Drain-Source Breakdown Voltage
: 300 V
Resistance Drain-Source RDS (on)
: 0.16 Ohms
Features: • 21A, 300V, RDS(on) = 0.16Ω @VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Specifications
|
Symbol |
Parameter |
FQP22N30 |
Units |
|
VDSS |
Drain-Source Voltage |
300 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
21 |
A |
|
13.3 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
84 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1000 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
21 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
17 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
170 |
W
|
|
1.35 |
W/ |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power field effect transistors of FQP22N30 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQP22N30 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQP22N30 is well suited for high efficiency switching DC/DC converters,switch mode power supply.
Parameters: | Technical/Catalog Information | FQP22N30 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 10.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2200pF @ 25V |
| Power - Max | 170W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP22N30
FQP22N30
|
FQP22N30 Data Sheet
