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FQP1N60

MOSFET 600V N-Channel QFET

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SeekIC No. : 00163150 Detail

FQP1N60: MOSFET 600V N-Channel QFET

FQP1N60 Data Sheet

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Part Number:
FQP1N60
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.2 A
Resistance Drain-Source RDS (on) : 11.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 1.2 A
Resistance Drain-Source RDS (on) : 11.5 Ohms


Features:

* Advanced New Design
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Unrivalled Gate Charge: 5.0nC (Typ.)
* Extended Safe Operating Area
*Lower RDS(ON) : 9.3 (Typ.)


Specifications

Symbol Characteristics Value Units
VDSS Drain-to-Source Voltage 600 V
ID Continuous Drain Current (TC = 25) 1.2 A
Continuous Drain Current (TC = 100)
0.76
IDM Drain Current-Pulsed            4.8 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy         50 mJ
IAR Avalanche Current                1.2 A
EAR Repetitive Avalanche Energy             4.0 mJ
dv/dt Peak Diode Recovery dv/dt          4.5 V/ns
PD Total Power Dissipation (TC = 25)
Linear Derating Factor		 40
0.32		 W
W/
TJ  , TSTG Operating Junction and Storage
Temperature Range		 -55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300



Parameters:

Technical/Catalog InformationFQP1N60
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C1.2A
Rds On (Max) @ Id, Vgs11.5 Ohm @ 600mA, 10V
Input Capacitance (Ciss) @ Vds 150pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs6nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP1N60
FQP1N60



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