Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Continuous Drain Current
: 18 A
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 200 V
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.14 Ohms
Features: • 18A, 200V, RDS(on) = 0.14Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
|
Symbol |
Parameter |
FQP10N20C |
FQPF10N20C
|
Units |
|
VDSS |
Drain-Source Voltage |
200 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
18
|
18
|
A |
|
11.9 |
11.9 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
72 |
72 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
340 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
18 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
12.3 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
123 |
40 |
W
|
|
0.99 |
0.32
|
W/ |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power field effect transistors of FQP18N20V2 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology FQP18N20V2 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP18N20V2 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQP18N20V2 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1080pF @ 25V |
| Power - Max | 123W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 26nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP18N20V2
FQP18N20V2
|
FQP18N20V2 Data Sheet
