FQP13N50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.43 Ohms
Continuous Drain Current : 12.5 A


Features:

• 12.5A, 500V, R_DS(on) = 0.43 @V_GS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQP13N50	FQPF13N50	Units
VDSS	Drain-Source Voltage	500		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	12.5	12.5*	A
		7.9	7.9*	A
IDM	Drain Current - Pulsed (Note 1)	50	50*	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	810		mJ
IAR	Avalanche Current (Note 1)	12.5		A
EAR	Repetitive Avalanche Energy (Note 1)	17		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	170	56	W
		1.35	0.45	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

* Drain current limited by maximum junction temperature.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.3mH, I_AS = 12.5A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 13.4A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These N-Channel enhancement mode power field effect transistors of FQP13N50 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP13N50 is well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Parameters:

Technical/Catalog Information	FQP13N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	12.5A
Rds On (Max) @ Id, Vgs	430 mOhm @ 6.25A, 10V
Input Capacitance (Ciss) @ Vds	2300pF @ 25V
Power - Max	170W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP13N50 FQP13N50