MOSFET 60V N-Channel QFET Logic Level
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 13.6 A | ||
Resistance Drain-Source RDS (on) : | 0.11 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol |
Parameter |
FQP13N06L |
Units |
VDSS | Drain-Source Voltage |
60 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
13.6 |
A |
8.6 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
54.4 |
A |
VGSS | Gate-Source Voltage |
± 20 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
90 |
mJ |
IAR | Avalanche Current (Note 1) |
13.6 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
4.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
45 |
W |
0.3 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55 to +175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQP13N06L are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP13N06L is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Technical/Catalog Information | FQP13N06L |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 13.6A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 6.8A, 10V |
Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
Power - Max | 45W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 6.4nC @ 5V |
Package / Case | TO-220 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQP13N06L FQP13N06L |