FQP11N50CF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.55 Ohms
Continuous Drain Current : 11 A


Features:

• 11A, 500V, R_DS(on) = 0.55 @V_GS = 10 V
• Low Gate Charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• Fast Recovery Body Diode (typical 90ns)


Specifications

Symbol	Parameter	FQP11N50CF	FQPF11N50CF	Units
VDSS	Drain-Source Voltage	500		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	11	11*	A
		7	7*	A
IDM	Drain Current - Pulsed (Note 1)	44	44*	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	670		mJ
IAR	Avalanche Current (Note 1)	11		A
EAR	Repetitive Avalanche Energy (Note 1)	19.5		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	195	48	W
		1.56	0.39	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

* Drain current limited by maximum junction temperature
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10mH, I_AS = 11A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 11A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These N-Channel enhancement mode power FQP11N50CF field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP11N50CF is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology

Parameters:

Technical/Catalog Information	FQP11N50CF
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	550 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	2055pF @ 25V
Power - Max	195W
Packaging	Tube
Gate Charge (Qg) @ Vgs	55nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP11N50CF FQP11N50CF