Position: Home  > All Categories> Integrated Circuits (ICs) > FQP11N40C

FQP11N40C

MOSFET 400V N-Channel Advance Q-FET

product image

FQP11N40C Picture
See larger image
SeekIC No. : 00146417 Detail

FQP11N40C: MOSFET 400V N-Channel Advance Q-FET

FQP11N40C Data Sheet

floor Price/Ceiling Price

US $ .49~.73 / Piece | Get Latest Price
Part Number:
FQP11N40C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.73
  • $.56
  • $.55
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.53 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.53 Ohms
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 400 V


Features:

• 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQP11N40C FQPF11N40C Units
VDSS Drain-Source Voltage 400 V
ID Drain Current - Continuous (TC = 25)           (Note 6)
                      - Continuous (TC = 100)         (Note 6)		 10.5 10.5 * A
6.6 6.6 * A
IDM Drain Current - Pulsed                                    (Note 1) 42 42 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy                    (Note 2) 360 mJ
IAR Avalanche Current                                         (Note 1) 11 A
EAR Repetitive Avalanche Energy                         (Note 1) 13.5 mJ
dv/dt Peak Diode Recovery dv/dt                           (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25)
         - Derate above 25		 135 44 W
1.07 0.35 W/
TJ , TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300



Parameters:

Technical/Catalog InformationFQP11N40C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C10.5A
Rds On (Max) @ Id, Vgs530 mOhm @ 5.25A, 10V
Input Capacitance (Ciss) @ Vds 1090pF @ 25V
Power - Max135W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP11N40C
FQP11N40C



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Filters
PICO2205A
PICO2204A
Kits
IT243
UVSC-110-4E1
RF and RFID
X3C26P1-30S
1P620S
Line Protection, Backups
BX0023
A20B-1008-0550
Cables, Wires
821-0814-a
415-0100-150
Test Equipment
TOP853
TOP2005
View more