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FQP11N40C

MOSFET 400V N-Channel Advance Q-FET

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SeekIC No. : 00146417 Detail

FQP11N40C: MOSFET 400V N-Channel Advance Q-FET

FQP11N40C Data Sheet

floor Price/Ceiling Price

US $ .49~.73 / Piece | Get Latest Price
Part Number:
FQP11N40C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.73
  • $.56
  • $.55
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.53 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.53 Ohms
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 400 V


Features:

• 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQP11N40C FQPF11N40C Units
VDSS Drain-Source Voltage 400 V
ID Drain Current - Continuous (TC = 25)           (Note 6)
                      - Continuous (TC = 100)         (Note 6)		 10.5 10.5 * A
6.6 6.6 * A
IDM Drain Current - Pulsed                                    (Note 1) 42 42 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy                    (Note 2) 360 mJ
IAR Avalanche Current                                         (Note 1) 11 A
EAR Repetitive Avalanche Energy                         (Note 1) 13.5 mJ
dv/dt Peak Diode Recovery dv/dt                           (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25)
         - Derate above 25		 135 44 W
1.07 0.35 W/
TJ , TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300



Parameters:

Technical/Catalog InformationFQP11N40C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C10.5A
Rds On (Max) @ Id, Vgs530 mOhm @ 5.25A, 10V
Input Capacitance (Ciss) @ Vds 1090pF @ 25V
Power - Max135W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP11N40C
FQP11N40C



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