Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Continuous Drain Current
: 9.5 A
Resistance Drain-Source RDS (on)
: 0.73 Ohms
Features: • 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQP10N60C |
FQPF10N60C |
Units |
| VDSS |
Drain-Source Voltage |
600 |
600 |
V |
| ID |
Drain Current - Continuous (TC = 25°C) |
9.5 |
9.5 * |
A |
| ID |
Drain Current - Continuous (TC = 100°C) |
3.3 |
3.3* |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
38 |
38* |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
700 |
700 |
mJ |
| IAR |
Single Pulsed Avalanche Energy (Note 2) |
9.5 |
9.5 |
A |
| EAR |
Repetitive Avalanche Energy |
15.6 |
15.6 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C) |
156 |
50 |
W |
| PD |
- Derate above 25°C |
1.25 |
0.4 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
-55 to +150 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
300 |
°C |
* Drain current limited by maximum junction temperature.DescriptionThese N-Channel enhancement mode power FQP10N60C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQP10N60C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP10N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parameters: | Technical/Catalog Information | FQP10N60C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 9.5A |
| Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 2040pF @ 25V |
| Power - Max | 156W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 57nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP10N60C
FQP10N60C
|
FQP10N60C Data Sheet
