Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Continuous Drain Current
: 40 A
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.11 Ohms
Package / Case
: TO-264
Features: • 40A, 500V, RDS(on) = 0.11Ω @VGS = 10 V
• Low gate charge ( typical 155 nC)
• Low Crss ( typical 95 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQL40N50 |
Units |
| VDSS |
Drain-Source Voltage |
500 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
40 |
A |
|
25 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
160 |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
1780 |
mJ |
| IAR |
Avalanche Current (Note 1) |
40 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
46 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
460 |
W |
|
3.7 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power FQL40N50 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQL40N50 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQL40N50 is well suited for high efficiency switch mode power supply, power factor correction, motor drive and welding machine.
Parameters: | Technical/Catalog Information | FQL40N50 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 40A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 20A, 10V |
| Input Capacitance (Ciss) @ Vds | 7500pF @ 25V |
| Power - Max | 460W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 200nC @ 10V |
| Package / Case | TO-264 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQL40N50
FQL40N50
|
FQL40N50 Data Sheet
