FQI9N50CTU, US $ .91-1.9 , Fairchild Semiconductor, FQI9N50CTU DataSheet download, circuit diagram from SeekIC.com

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FQI9N50CTU: MOSFET 500V N-Channel Adv Q-FET C-Series

FQI9N50CTU Data Sheet

US $ .91~1.9 / Piece | Get Latest Price

Part Number:: FQI9N50CTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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Recent History
What is this?

FQI95N03LTU evaluate
MOSFET
FQI9N08 evaluate
Features: • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V• Low gate charge ( typical 5....
FQI9N08L evaluate
Features: • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V• Low gate charge ( typical 4....

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	9 A
Resistance Drain-Source RDS (on) :	0.8 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.8 Ohms

Parameters:

Technical/Catalog Information	FQI9N50CTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	800 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	1030pF @ 25V
Power - Max	135W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI9N50CTU FQI9N50CTU

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FQI9N50CTU

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