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FQI9N50C

Features: • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 24 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB9N50C/FQI9N50C Units VDSS D...

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SeekIC No. : 004343333 Detail

FQI9N50C: Features: • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 24 pF)• Fast switching• 100% avalanche tested• Impr...

FQI9N50C Data Sheet

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Part Number:
FQI9N50C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB9N50C/FQI9N50C
Units
VDSS Drain-Source Voltage
500
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
9
A
5.4
A
IDM Drain Current - Pulsed (Note 1)
36
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
360
mJ
IAR Avalanche Current (Note 1)
9
A
EAR Repetitive Avalanche Energy (Note 1)
13.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
135
W
1.07
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQI9N50C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQI9N50C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI9N50C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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