Features: • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V• Low gate charge ( typical 5.9 nC)• Low Crss ( typical 13 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol ...
FQI9N08: Features: • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V• Low gate charge ( typical 5.9 nC)• Low Crss ( typical 13 pF)• Fast switching• 100% avalanche tested• Imp...
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Symbol | Parameter |
FQB9N08 / FQI9N08 |
Units |
VDSS | Drain-Source Voltage |
80 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9.3 |
A |
6.57 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
37.2 |
A |
VGSS | Gate-Source Voltage |
± 25 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
55 |
mJ |
IAR | Avalanche Current (Note 1) |
9.3 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
4.0 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
40 |
W | |
0.27 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQI9N08 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQI9N08 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQI9N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.