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FQI8P10

Features: • -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 30 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol...

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SeekIC No. : 004343328 Detail

FQI8P10: Features: • -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 30 pF)• Fast switching• 100% avalanche tested• ...

FQI8P10 Data Sheet

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Part Number:
FQI8P10
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Description



Features:

• -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol Parameter
FQB8P10 / FQI8P10
Units
VDSS Drain-Source Voltage
-100
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-8.0
A
-5.7
A
IDM Drain Current - Pulsed (Note 1)
-32
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
150
mJ
IAR Avalanche Current (Note 1)
-8.0
A
EAR Repetitive Avalanche Energy (Note 1)
6.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-56.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
65
W
0.43
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These P-Channel enhancement mode power field effect transistors of FQI8P10 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
 
This advanced technology of FQI8P10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI8P10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.




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