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FQI7P06TU

MOSFET 60V P-Channel QFET

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SeekIC No. : 00162266 Detail

FQI7P06TU: MOSFET 60V P-Channel QFET

FQI7P06TU Data Sheet

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Part Number:
FQI7P06TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : - 7 A
Resistance Drain-Source RDS (on) : 0.41 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 60 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.41 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : - 7 A


Parameters:

Technical/Catalog InformationFQI7P06TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs410 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds 295pF @ 25V
Power - Max3.75W
PackagingTube
Gate Charge (Qg) @ Vgs8.2nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI7P06TU
FQI7P06TU



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