FQI7N60TU, US $ .45-.61 , Fairchild Semiconductor, FQI7N60TU DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00152481 Detail

FQI7N60TU: MOSFET 600V N-Channel QFET

FQI7N60TU Data Sheet

US $ .45~.61 / Piece | Get Latest Price

Part Number:: FQI7N60TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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Recent History
What is this?

FQI70N08 evaluate
Features: • 70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V• Low gate charge ( typical 75...
FQI70N08TU evaluate
MOSFET
FQI70N10 evaluate
Features: • 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V• Low gate charge ( typical 8...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	7.4 A
Resistance Drain-Source RDS (on) :	1 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-262	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 7.4 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 1 Ohms

Parameters:

Technical/Catalog Information	FQI7N60TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7.4A
Rds On (Max) @ Id, Vgs	1 Ohm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds	1430pF @ 25V
Power - Max	3.13W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI7N60TU FQI7N60TU

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FQI7N60TU

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