Features: • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V• Low gate charge ( typical 4.6 nC)• Low Crss ( typical 12 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature rating• Low level gate drive...
FQI7N10L: Features: • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V• Low gate charge ( typical 4.6 nC)• Low Crss ( typical 12 pF)• Fast switching• 100% avalanche tested• Im...
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Symbol | Parameter |
FQB7N10L / FQI7N10L |
Units |
VDSS | Drain-Source Voltage |
100 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
7.3 |
A |
5.15 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
29.2 |
A |
VGSS | Gate-Source Voltage |
± 20 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
50 |
mJ |
IAR | Avalanche Current (Note 1) |
7.3 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
4.0 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
40 |
W | |
0.27 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQI7N10L are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQI7N10L is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQI7N10L is well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.