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FQI6N60C

Features: · 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V· Low gate charge ( typical 16 nC)· Low Crss ( typical 7 pF)· Fast switching· 100% avalanche tested· Improved dv/dt capabilitySpecifications Symbol Parameter FQB6N60C / FQI6N60C Units VDSS Drain-Source Voltage 5.5 5.5 * ...

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SeekIC No. : 004343314 Detail

FQI6N60C: Features: · 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V· Low gate charge ( typical 16 nC)· Low Crss ( typical 7 pF)· Fast switching· 100% avalanche tested· Improved dv/dt capabilitySpecifications ...

FQI6N60C Data Sheet

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Part Number:
FQI6N60C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
· Low gate charge ( typical  16 nC)
· Low Crss ( typical  7 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capability


Specifications

Symbol Parameter
FQB6N60C / FQI6N60C
Units
VDSS Drain-Source Voltage
5.5       5.5 *
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
3.3      3.3*
A
22        22 *
A
IDM Drain Current - Pulsed (Note 1)
24.8
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
440
mJ
IAR Avalanche Current (Note 1)
5.5
A
EAR Repetitive Avalanche Energy (Note 1)
13
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
12.5
V/ns
PD Power Dissipation (TA = 25°C) *
4.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
125
W
1.0
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel  enhancement  mode  power FQI6N60C  field  effect transistors  are  produced  using  Fairchild's  proprietary, planar stripe,  DMOS technology.

This advanced technology FQI6N60C has been especially tailored to minimize  on-state  resistance,  provide  superior  switching performance,  and  withstand  high  energy  pulse  in  the avalanche and commutation mode. FQI6N60C is well suited  for  high  efficiency  switched  mode  power  supplies, active  power  factor  correction,  electronic  lamp  ballasts  based on half bridge topology.




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