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FQI6N50TU

MOSFET 500V N-Ch QFET

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SeekIC No. : 00162663 Detail

FQI6N50TU: MOSFET 500V N-Ch QFET

FQI6N50TU Data Sheet

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Part Number:
FQI6N50TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 1.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5.5 A
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 1.3 Ohms


Parameters:

Technical/Catalog InformationFQI6N50TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C5.5A
Rds On (Max) @ Id, Vgs1.3 Ohm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds 790pF @ 25V
Power - Max3.13W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI6N50TU
FQI6N50TU



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