FQI6N45

Features: • 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V• Low gate charge ( typical 16 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB6N45 / FQI6N45 Units VDSS D...

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SeekIC No. : 004343312 Detail

FQI6N45: Features: • 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V• Low gate charge ( typical 16 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Impr...

floor Price/Ceiling Price

Part Number:
FQI6N45
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Description



Features:

• 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter
FQB6N45 / FQI6N45
Units
VDSS Drain-Source Voltage
450
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
6.2
A
3.9
A
IDM Drain Current - Pulsed (Note 1)
25
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
350
mJ
IAR Avalanche Current (Note 1)
6.2
A
EAR Repetitive Avalanche Energy (Note 1)
9.8
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
98
W
0.78
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQI6N45 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQI6N45 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI6N45 is well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.




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