Features: • 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V• Low gate charge ( typical 16 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB6N45 / FQI6N45 Units VDSS D...
FQI6N45: Features: • 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V• Low gate charge ( typical 16 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Impr...
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Symbol | Parameter |
FQB6N45 / FQI6N45 |
Units |
VDSS | Drain-Source Voltage |
450 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
6.2 |
A |
3.9 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
25 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
350 |
mJ |
IAR | Avalanche Current (Note 1) |
6.2 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
9.8 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
98 |
W | |
0.78 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQI6N45 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQI6N45 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI6N45 is well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.