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FQI4N25TU

MOSFET

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SeekIC No. : 00151721 Detail

FQI4N25TU: MOSFET

FQI4N25TU Data Sheet

floor Price/Ceiling Price

US $ .27~.59 / Piece | Get Latest Price
Part Number:
FQI4N25TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.59
  • $.49
  • $.35
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 1.75 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 1.75 Ohms


Parameters:

Technical/Catalog InformationFQI4N25TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C3.6A
Rds On (Max) @ Id, Vgs1.75 Ohm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds 200pF @ 25V
Power - Max3.13W
PackagingTube
Gate Charge (Qg) @ Vgs5.6nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI4N25TU
FQI4N25TU



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