FQI4N20L

Symbol

Parameter

FQB4N20L / FQI4N20L

Units

V_DSS

Drain-Source Voltage

200

V

I_D

Drain Current

- Continuous (TC =25°C)

3.8

A

- Continuous (TC = 100°C)

2.4

A

I_DM

DrainCurrentPulsed  (Note 1)                 

15.2

A

V_GSS

Gate-Source Voltage

± 20

V

E_AS

Single Pulsed Avalanche Energy (Note 2)

52

mJ

I_AR

Avalanche Current                     (Note 1)

3.8

A

E_AR

Repetitive Avalanche Energy     (Note 1)

4.5

mJ

d _v/dt

PeakDiode Recovery dv/dt      (Note 3)

5.5

V/ns

P_D

T_{J, TSTG}

Power Dissipation (TC = 25°C)

45

W

- Derate above 25°C

0.36

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

T_L

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C