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FQI3N80TU

MOSFET 800V N-Channel QFET

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SeekIC No. : 00160919 Detail

FQI3N80TU: MOSFET 800V N-Channel QFET

FQI3N80TU Data Sheet

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Part Number:
FQI3N80TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Continuous Drain Current : 3 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 5 Ohms


Parameters:

Technical/Catalog InformationFQI3N80TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs5 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 690pF @ 25V
Power - Max3.13W
PackagingTube
Gate Charge (Qg) @ Vgs19nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI3N80TU
FQI3N80TU



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