Features: • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V• Low gate charge ( typical 30 nC)• Low Crss ( typical 70 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol ...
FQI33N10L: Features: • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V• Low gate charge ( typical 30 nC)• Low Crss ( typical 70 pF)• Fast switching• 100% avalanche tested• Imp...
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Features: • 32A, 120V, RDS(on) = 0.05Ω @VGS = 10 V• Low gate charge ( typical 41...
Symbol | Parameter |
FQB33N10L / FQI33N10L |
Units |
VDSS | Drain-Source Voltage |
100 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
33 |
A |
23 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
132 |
A |
VGSS | Gate-Source Voltage |
± 20 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
430 |
mJ |
IAR | Avalanche Current (Note 1) |
33 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
12.7 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
127 |
W | |
0.85 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQI33N10L are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQI33N10L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI33N10L is well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.