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FQI33N10

Features: • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V• Low gate charge ( typical 38 nC)• Low Crss ( typical 62 pF)• Fast switching.• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol ...

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SeekIC No. : 004343278 Detail

FQI33N10: Features: • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V• Low gate charge ( typical 38 nC)• Low Crss ( typical 62 pF)• Fast switching.• 100% avalanche tested• Im...

FQI33N10 Data Sheet

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Part Number:
FQI33N10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Description



Features:

• 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 62 pF)
• Fast switching.
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol Parameter
FQB33N10 / FQI33N10
Units
VDSS Drain-Source Voltage
100
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
33
A
23
A
IDM Drain Current - Pulsed (Note 1)
132
A
VGSS Gate-Source Voltage
± 25
V
EAS Single Pulsed Avalanche Energy (Note 2)
435
mJ
IAR Avalanche Current (Note 1)
33
A
EAR Repetitive Avalanche Energy (Note 1)
12.7
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
6.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
127
W
0.85
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQI33N10 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQI33N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI33N10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.




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