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FQI32N20C

Features: • 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V• Low gate charge ( typical 82.5 nC)• Low Crss ( typical 185 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB32N20C / FQI32N20C Units ...

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SeekIC No. : 004343277 Detail

FQI32N20C: Features: • 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V• Low gate charge ( typical 82.5 nC)• Low Crss ( typical 185 pF)• Fast switching• 100% avalanche tested• ...

FQI32N20C Data Sheet

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Part Number:
FQI32N20C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V
• Low gate charge ( typical 82.5 nC)
• Low Crss ( typical 185 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB32N20C / FQI32N20C
Units
VDSS Drain-Source Voltage
200
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
28.0
A
17.8
A
IDM Drain Current - Pulsed (Note 1)
112
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
955
mJ
IAR Avalanche Current (Note 1)
28.0
A
EAR Repetitive Avalanche Energy (Note 1)
15.6
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
3.13
W
156
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQI32N20C field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology FQI32N20C has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. FQI32N20C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballastsbased on half bridge topology.




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