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FQI32N12V2TU: MOSFET 120V N-Ch Adv QFET V2 series

FQI32N12V2TU Data Sheet

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Part Number:: FQI32N12V2TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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What is this?

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MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	120 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	32 A
Resistance Drain-Source RDS (on) :	0.05 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	I2PAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Drain-Source Breakdown Voltage : 120 V
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.05 Ohms

Parameters:

Technical/Catalog Information	FQI32N12V2TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	50 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1860pF @ 25V
Power - Max	3.75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI32N12V2TU FQI32N12V2TU

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FQI32N12V2TU

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