FQI2P25TU, US $ .27-.6 , Fairchild Semiconductor, FQI2P25TU DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151850 Detail

FQI2P25TU: MOSFET

FQI2P25TU Data Sheet

US $ .27~.6 / Piece | Get Latest Price

Part Number:: FQI2P25TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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25~100
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Upload time: 2024/11/21

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Recent History
What is this?

FQI20N06 evaluate
Features: • 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V• Low gate charge ( typical 11....
FQI20N06L evaluate
Features: • 21A, 60V, RDS(on) = 0.055Ω @VGS = 10 V• Low gate charge ( typical 9....
FQI22N30TU evaluate
MOSFET DISC BY MFG 2/02

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 250 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	2.3 A
Resistance Drain-Source RDS (on) :	4 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	I2PAK	Packaging :	Tube

Description

Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : I2PAK
Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 4 Ohms
Drain-Source Breakdown Voltage : - 250 V

Parameters:

Technical/Catalog Information	FQI2P25TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	4 Ohm @ 1.15A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	3.13W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8.5nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI2P25TU FQI2P25TU

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FQI2P25TU

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