Position: Home  > All Categories> Integrated Circuits (ICs) > FQI2N60

FQI2N60

Features: • 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V• Low gate charge ( typical 9.0 nC)• Low Crss ( typical 5.0 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB2N60 / FQI2N60 Units VDSS ...

product image

FQI2N60 Picture
See larger image
SeekIC No. : 004343269 Detail

FQI2N60: Features: • 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V• Low gate charge ( typical 9.0 nC)• Low Crss ( typical 5.0 pF)• Fast switching• 100% avalanche tested• Im...

FQI2N60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQI2N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/30

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB2N60 / FQI2N60
Units
VDSS Drain-Source Voltage
600
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
2.4
A
1.5
A
IDM Drain Current - Pulsed (Note 1)
9.6
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
140
mJ
IAR Avalanche Current (Note 1)
2.4
A
EAR Repetitive Avalanche Energy (Note 1)
6.4
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
64
W
0.51
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQI2N60 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQI2N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI2N60 is well suited for high efficiency switch mode power supply.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optoelectronics
SFH7770
TLP423J
Transformers
TM-09210
BV222-1-00992
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Memory Cards, Modules
WT32
VTL5C7
Resistors
A101G
3006P-1-205LF
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
View more