FQI27N25TU, US $ .52-.7 , Fairchild Semiconductor, FQI27N25TU DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00152537 Detail

FQI27N25TU: MOSFET 250V N-Channel QFET

FQI27N25TU Data Sheet

US $ .52~.7 / Piece | Get Latest Price

Part Number:: FQI27N25TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Recent History
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	25.5 A
Resistance Drain-Source RDS (on) :	0.11 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-262	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.11 Ohms
Package / Case : TO-262
Continuous Drain Current : 25.5 A

Parameters:

Technical/Catalog Information	FQI27N25TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	25.5A
Rds On (Max) @ Id, Vgs	110 mOhm @ 12.75A, 10V
Input Capacitance (Ciss) @ Vds	2450pF @ 25V
Power - Max	3.13W
Packaging	Tube
Gate Charge (Qg) @ Vgs	65nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI27N25TU FQI27N25TU

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FQI27N25TU

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