Features: • 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V• Low gate charge ( typical 45 nC).• Low Crss ( typical 25 pF).• Fast switching.• 100% avalanche tested.• Improved dv/dt capability.Specifications Symbol Parameter FQB13N50 / FQI13N50 Units ...
FQI13N50: Features: • 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V• Low gate charge ( typical 45 nC).• Low Crss ( typical 25 pF).• Fast switching.• 100% avalanche tested.•...
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Symbol | Parameter |
FQB13N50 / FQI13N50 |
Units |
VDSS | Drain-Source Voltage |
500 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
12.5 |
A |
7.9 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
50 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
810 |
mJ |
IAR | Avalanche Current (Note 1) |
12.5 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
17 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
170 |
W | |
1.35 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQI13N50 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQI13N50 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI13N50 is well suited for high efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on half bridge.