FQH8N100C

MOSFET 1000V N-Channel

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SeekIC No. : 00145760 Detail

FQH8N100C: MOSFET 1000V N-Channel

floor Price/Ceiling Price

US $ 1.64~2.22 / Piece | Get Latest Price
Part Number:
FQH8N100C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.22
  • $2
  • $1.82
  • $1.64
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 1.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Continuous Drain Current : 8 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 1.45 Ohms


Parameters:

Technical/Catalog InformationFQH8N100C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs1.45 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 3220pF @ 25V
Power - Max225W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQH8N100C
FQH8N100C



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