Features: • N-Channel 0.54A, 250V, RDS(on) = 2.0 Ω @ VGS = 10 VP-Channel -0.54A, -250V, RDS(on) = 2.0 Ω @ VGS = -10 V• Low gate charge ( typical N-Channel 6.0 nC) ( typical P-Channel 12.0 nC)• Fast switching• Improved dv/dt capabilitySpecifications Symbol ...
FQG4902: Features: • N-Channel 0.54A, 250V, RDS(on) = 2.0 Ω @ VGS = 10 VP-Channel -0.54A, -250V, RDS(on) = 2.0 Ω @ VGS = -10 V• Low gate charge ( typical N-Channel 6.0 nC) ( typical P...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | N-Channel | P-Channel | Units |
VDSS | Drain-Source Voltage | 250 | -250 | V |
ID | Drain Current - Continuous (TA = 25) - Continuous (TA = 100) |
0.54 | -0.54 | A |
0.34 | -0.34 | A | ||
IDM | Drain Curent - Pulsed (Note 1) | 4.32 | -4.32 | A |
VGSS | Gate-Source Voltage | ± 30 | V | |
dv/dt | Peak Diode Recovery dv/dt (Note 2) | 5.5 | -5.5 | V/ns |
PD | Power Dissipation (TA = 25) - Derate above 25 |
1.4 | W | |
0.011 | W/ | |||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 |
These dual N and P-channel enhancement mode power FQG4902 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQG4902 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQG4902 is well suited for electronic lamp ballast based on half bridge.