FQFP14N15

The FQFP14N15 is produced using fairchild's propristary, planar stripe, DMOS technology. The feature of FQFP14N15 are as follows: (1)9.8A, 150V, RDS = 0.21@VGS = 10V; (2)low gate charge; (3)low crss; (4)fast switching; (5)100% avalanche tested; (6)improved dv/dt capability; (7)175 maximum junction temperature rating.

The absolute maximum ratings of the FQFP14N15 are: (1)drain-source voltage: 150V; (2)drain current: 9.8A; (3)gate-source voltage: ±25V; (4)single pulsed avalanche energy: 200mJ; (5)avalanche current: 9.8A; (6)repetitive  avalanche energy: 4.8mJ; (7)peak diode recovery dv/dt: 5.5V/ns; (8)power dissipation: 48W; (9)operating and storage temerature range: -55 to +175; (10)maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds.

The following is about the electrical characteristics of FQFP14N15: (1)drain-source breakdown voltage: 150V min at VGS = 0V, ID = 250A; (2)breakdown voltage temperature coefficient: 0.14V/ typical; (3)zero gate voltage drain current: 1A at VDS = 150V, VGS = 0V; (4)gate-body leakage current, forward: 100nA at VGS = 25V, VDS = 0V; (5)gate-body leakage current, reverse: -100nA at VGS = -25V, VDS = 0V; (6)gate threshold voltage: 2.0V min and 4.0V max at VDS = VGS, ID = 250A; (7)static drain-source on-resistance: 0.164 typical and 0.21 max at VDS = 10V, ID = 4.9A.