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FQD8P10TM_F080

MOSFET Trans MOS P-Ch 100V 6.6A 3-Pin 2+Tab

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SeekIC No. : 00162018 Detail

FQD8P10TM_F080: MOSFET Trans MOS P-Ch 100V 6.6A 3-Pin 2+Tab

FQD8P10TM_F080 Data Sheet

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Part Number:
FQD8P10TM_F080
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 6.6 A
Resistance Drain-Source RDS (on) : 0.53 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.53 Ohms
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 6.6 A


Parameters:

Technical/Catalog InformationFQD8P10TM_F080
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C6.6A
Rds On (Max) @ Id, Vgs530 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds 470pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD8P10TM_F080
FQD8P10TM_F080



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