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FQD6P25TM

MOSFET P-CH/250V/4.7A/1.1OHM

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SeekIC No. : 00160855 Detail

FQD6P25TM: MOSFET P-CH/250V/4.7A/1.1OHM

FQD6P25TM Data Sheet

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Part Number:
FQD6P25TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 4.7 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 1.1 Ohms
Drain-Source Breakdown Voltage : - 250 V
Continuous Drain Current : - 4.7 A


Parameters:

Technical/Catalog InformationFQD6P25TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C4.7A
Rds On (Max) @ Id, Vgs1.1 Ohm @ 2.35A, 10V
Input Capacitance (Ciss) @ Vds 780pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs27nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD6P25TM
FQD6P25TM



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