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FQD6N40C

Features: • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V• Low gate charge ( typical 16nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD6N40C /FQU6N40C Units VDSS Drain...

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SeekIC No. : 004343219 Detail

FQD6N40C: Features: • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V• Low gate charge ( typical 16nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Impro...

FQD6N40C Data Sheet

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Part Number:
FQD6N40C
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•  4.5A, 400V, RDS(on) =   1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD6N40C /FQU6N40C Units
VDSS Drain-Source Voltage 400 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 4.5 A
2.7 A
IDM Drain Current - Pulsed (Note 1) 18 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ
IAR Avalanche Current (Note 1) 4.5 A
EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5  V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 48 W
0.38 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  



Description

    These N-Channel enhancement mode power FQD6N40C field effect transistors are produced using Fairchild's proprietary, planar stripe,  DMOS technology.

    This advanced technology FQD6N40C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD6N40C is well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.




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