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FQD4N50TF

MOSFET 500V N-Channel QFET

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SeekIC No. : 00160194 Detail

FQD4N50TF: MOSFET 500V N-Channel QFET

FQD4N50TF Data Sheet

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Part Number:
FQD4N50TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.6 A
Resistance Drain-Source RDS (on) : 2.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 2.7 Ohms
Continuous Drain Current : 2.6 A


Parameters:

Technical/Catalog InformationFQD4N50TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C2.6A
Rds On (Max) @ Id, Vgs2.7 Ohm @ 1.3A, 10V
Input Capacitance (Ciss) @ Vds 460pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD4N50TF
FQD4N50TF



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