MOSFET 250V N-Channel QFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 3 A | ||
Resistance Drain-Source RDS (on) : | 1.75 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Technical/Catalog Information | FQD4N25TM_WS |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 3A |
Rds On (Max) @ Id, Vgs | 1.75 Ohm @ 1.5A, 10V |
Input Capacitance (Ciss) @ Vds | 200pF @ 25V |
Power - Max | 2.5W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 5.6nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQD4N25TM_WS FQD4N25TM_WS |