FQD3P50TM

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Drain-Source Breakdown Voltage : - 500 V
Continuous Drain Current : - 2.1 A
Resistance Drain-Source RDS (on) : 4.9 Ohms


Description

The FQD3P50TM is one member of the FQD3P50 series.These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD3P50TM is well suited for electronic lamp ballast based on complimentary half bridge.

Features of the FQD3P50TM are:(1)-2.1A, -500V, RDS(on)= 4.9 @VGS= -10 V; (2)low gate charge ( typical 18 nC); (3)low crss ( typical  9.5 pF); (4)fast switching; (5)100% avalanche tested; (6)improved dv/dt capability.fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein;neither does it convey any license under its patent rights, nor the rights of others.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

The absolute maximum ratings of the FQD3P50TM can be summarized as:(1)drain-source voltage:-500V;(2)storage temperature range:-55 to 150;(3)gate-source voltage:±30V;(4)single pulsed avalanche energy:250mJ;(5)avalanche current:-2.1 A.Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve design.

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Parameters:

Technical/Catalog Information	FQD3P50TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	2.1A
Rds On (Max) @ Id, Vgs	4.9 Ohm @ 1.05A, 10V
Input Capacitance (Ciss) @ Vds	660pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	23nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD3P50TM FQD3P50TM