FQD3P50 Selling Leads, Price trend, FQD3P50 DataSheet download, circuit diagram from SeekIC.com

Features: • -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD3P50 / FQU3P50 Units VD...

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SeekIC No. : 004343208 Detail

FQD3P50: Features: • -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improve...

FQD3P50 Data Sheet

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Part Number:: FQD3P50
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/5/17

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Product Details

Description

Features:

• -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Specifications

Symbol		Parameter		FQD3P50 / FQU3P50	Units
V_DSS		Drain-Source Voltage		-500	V
I_D		Drain Current	- Continuous (TC = 100°C)	-2.1	A
			- Continuous (TC = 25°C)	-1.33	A
I_DM		Drain Current Pulsed (Note 1)		-8.4	A
V_GSS		Gate-Source Voltage		± 30	V
E_AS		Single Pulsed Avalanche Energy (Note 2)		250	mJ
I_AR		Avalanche Current (Note 1)		-2.1	A
E_AR		Repetitive Avalanche Energy (Note 1)		5.0	mJ
d _v/dt		Peak Diode Recovery dv/dt (Note 3)		-4.5	V/ns
P_D T_{J, TSTG}	Power Dissipation (TA = 25°C)			2.5	W
	Power Dissipation (TC = 25°C) - Derate above 25°C			30	W/°C
				0.24
	Operating and Storage Temperature Range			-55 to +150	°C
T_L		Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds		300	°C

Description

These P-Channel enhancement mode power FQD3P50 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQD3P50 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD3P50 is well suited for electronic lamp ballast based on complimentary half bridge.

FQD3P50

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